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page . 1 stad-sep.14.2004 .049(1.25) .047(1.2)dia. .043(1.1) .008(0.2) .008(0.2) .071(1.8) .079(2.0) micro-melf unit : inch (mm) data sheet r e t e m a r a pl o b m y s e u l a vs t i n u 5 2 = b m a t t a n o i t a p i s s i d r e w o p o c p tot 0 0 5w m e r u t a r e p m e t n o i t c n u j t j 5 7 1 o c e g n a r e r u t a r e p m e t e g a r o t s t s 5 7 1 + o t 5 6 - o c . e r u t a r e p m e t t n e i b m a t a t p e k e r a e s a c m o r f m m 0 1 f o e c n a t s i d a t a s d a e l t a h t d e d i v o r p d i l a v r e t e m a r a pl o b m y s. n i m. p y t. x a ms t i n u r i a t n e i b m a o t n o i t c n u j e c n a t s i s e r l a m r e h t rh ta - - - - 3 . 0w m / k a m 0 0 1 = f i t a e g a t l o v d r a w r o f vf - - - - 1v . e r u t a r e p m e t t n e i b m a t a t p e k e r a e s a c m o r f m m 0 1 f o e c n a t s i d a t a s d a e l t a h t d e d i v o r p d i l a v features planar die construction 500mw power dissipation ideally suited for automated assembly processes mechanical data case: molded glass micro-melf terminals: solderable per mil-std-750, method 2026 polarity: see diagram below approx. weight: 0.01 grams mounting position: any packing information t/r - 2.5k per 7" plastic reel gmzj2.0~gmzj56 surface mount zener diodes voltage 2.0 to 56 volts power 500 mwatts maximum ratings and electrical characteristics in compliance with eu rohs 2002/95/ec directives
page . 2 stad-sep.14.2004 r e b m u n t r a p s s a l c v z @i zt z i (m ) a r v ) v ( ) a u ( r i x a m t z i ) a m ( z zt ( ? ?
page . 3 stad-sep.14.2004 r e b m u n t r a p s s a l c v z @i zt z i (m ) a r v ) v ( ) a u ( r i x a m t z i ) a m ( z zt ( ? ?
page . 4 stad-sep.14.2004 typical characteristics (t amb = 25 c unless otherwise specified) fig. 1 thermal resistance vs. lead length fig. 2 total power dissipation vs. ambient temperature fig. 3 typical change of working voltage under operating conditions at t amb =25c 95 961 1 0 5 10 15 0 100 200 300 400 500 20 r Ctherm.resist.junction/ ambient ( k/w) thja l C lead length ( mm ) ll t l =constant 0 40 80 120 160 0 100 300 400 500 600 p Ctotal power dissipation ( mw) tot t amb C ambient t emperature(c ) 200 95 9602 200 0 5 10 15 20 1 10 100 1000 v Cvoltagechange( mv ) z v z C z-voltag e(v) 25 95 9598 i z =5ma t j =25c fig. 4 typical change of working voltage vs. junction temperature fig. 5 temperature coefficient of vz vs. z-voltage fig. 6 diode capacitance vs. z-voltage C60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v C relative voltagechange ztn t j C junction temperature (c ) 240 95 9599 v ztn =v zt /v z (25c) tk vz =10 x 10 C4 /k 8x10 C4 /k C4 x 10 C4 /k 6x10 C4 /k 4x10 C4 /k 2x10 C4 /k C2 x 10 C4 /k 0 0102030 C5 0 5 10 15 tk Ctemperature coefficient of v ( 10 /k) vz v z C z-voltag e(v) 50 95 9600 40 z C4 i z =5ma 0 5 10 15 0 50 100 150 200 c C diode capacitance ( pf ) d v z C z-voltag e(v) 25 95 9601 20 t j =25c v r =2v
page . 5 stad-sep.14.2004 fig. 7 forward current vs. forward voltage fig. 8 z-current vs. z-voltage 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i C forward current ( ma) f v f C forward voltag e(v) t j =25c 04 81216 20 95 9604 0 20 40 60 80 100 i C z-current ( ma) z v z C z-voltag e(v) p tot =500mw t amb =25c fig. 9 z-current vs. z-voltage fig. 10 differential z-resistance vs. z-voltage 15 20 25 30 0 10 20 30 40 50 i C z-current ( ma) z v z C z-voltag e(v) 35 95 9607 p tot =500mw t amb =25c 0 5 10 15 20 1 10 100 1000 r C differential z-resistance ( ? ) z v z C z-voltag e(v) 25 95 9606 t j =25c i z =1ma 5ma 10ma 1 10 100 1000 z Cthermalresistance for pulsecond.(k/w ) thp t p C pulse length ( ms ) 95 9603 10 C1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax Ct amb i zm =(Cv z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) x fig. 11 thermal response

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